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PMBT3904QAZ

  • PMBT3904QAZ
  • PMBT3904QAZ

PMBT3904QAZ

PMBT3904QAZ

Nexperia USA Inc.

PMBT3904QAZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBT3904QAZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 3-XDFN Exposed Pad
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 440mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.05000 $0.05
500 $0.0495 $24.75
1000 $0.049 $49
1500 $0.0485 $72.75
2000 $0.048 $96
2500 $0.0475 $118.75
PMBT3904QAZ Product Details

PMBT3904QAZ Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

PMBT3904QAZ Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA

PMBT3904QAZ Applications


There are a lot of Nexperia USA Inc. PMBT3904QAZ applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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