MPSA18RLRP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA18RLRP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
1998
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOW NOISE
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
200mA
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MPSA18
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
160MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
80mV
Collector Base Voltage (VCBO)
45V
Emitter Base Voltage (VEBO)
6.5V
hFE Min
400
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.285776
$0.285776
10
$0.269600
$2.696
100
$0.254340
$25.434
500
$0.239943
$119.9715
1000
$0.226361
$226.361
MPSA18RLRP Product Details
MPSA18RLRP Overview
In this device, the DC current gain is 500 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 80mV.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.As a result, the part has a transition frequency of 160MHz.Collector current can be as low as 200mA volts at its maximum.
MPSA18RLRP Features
the DC current gain for this device is 500 @ 10mA 5V a collector emitter saturation voltage of 80mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 6.5V the current rating of this device is 200mA a transition frequency of 160MHz
MPSA18RLRP Applications
There are a lot of ON Semiconductor MPSA18RLRP applications of single BJT transistors.