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DXT13003DK-13

DXT13003DK-13

DXT13003DK-13

Diodes Incorporated

DXT13003DK-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT13003DK-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation3.9W
Terminal FormGULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 1.6W
Gain Bandwidth Product4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage450V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 4MHz
Collector Emitter Saturation Voltage400mV
Emitter Base Voltage (VEBO) 9V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:26156 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.807427$1.807427
10$1.705120$17.0512
100$1.608604$160.8604
500$1.517551$758.7755
1000$1.431652$1431.652

DXT13003DK-13 Product Details

DXT13003DK-13 Overview


This device has a DC current gain of 16 @ 500mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 250mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 4MHz.A maximum collector current of 1.5A volts is possible.

DXT13003DK-13 Features


the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz

DXT13003DK-13 Applications


There are a lot of Diodes Incorporated DXT13003DK-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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