DXT13003DK-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT13003DK-13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
3.9W
Terminal Form
GULL WING
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1.6W
Gain Bandwidth Product
4MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic
400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage
450V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
400mV
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.807427
$1.807427
10
$1.705120
$17.0512
100
$1.608604
$160.8604
500
$1.517551
$758.7755
1000
$1.431652
$1431.652
DXT13003DK-13 Product Details
DXT13003DK-13 Overview
This device has a DC current gain of 16 @ 500mA 2V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 250mA, 1A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 4MHz.A maximum collector current of 1.5A volts is possible.
DXT13003DK-13 Features
the DC current gain for this device is 16 @ 500mA 2V a collector emitter saturation voltage of 400mV the vce saturation(Max) is 400mV @ 250mA, 1A the emitter base voltage is kept at 9V a transition frequency of 4MHz
DXT13003DK-13 Applications
There are a lot of Diodes Incorporated DXT13003DK-13 applications of single BJT transistors.