2SAR293P5T100 Overview

In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 350mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).In this part, there is a transition frequency of 320MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2SAR293P5T100 Features

the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA
a transition frequency of 320MHz

2SAR293P5T100 Applications

There are a lot of ROHM Semiconductor 2SAR293P5T100 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver