Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BC857BHZGT116

  • BC857BHZGT116
  • BC857BHZGT116

BC857BHZGT116

BC857BHZGT116

ROHM Semiconductor

BC857BHZGT116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BC857BHZGT116 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.035520 $0.03552
500 $0.026118 $13.059
1000 $0.021765 $21.765
2000 $0.019968 $39.936
5000 $0.018661 $93.305
10000 $0.017359 $173.59
15000 $0.016789 $251.835
50000 $0.016508 $825.4
BC857BHZGT116 Product Details

BC857BHZGT116 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 210 @ 2mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The part has a transition frequency of 250MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC857BHZGT116 Features


the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 250MHz

BC857BHZGT116 Applications


There are a lot of ROHM Semiconductor BC857BHZGT116 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

Related Part Number

JANTXV2N3421
Microsemi Corporation
JANTXV2N3421
$0 $/piece
PMBTA13,215
Nexperia USA Inc.
PMBTA13,215
$0 $/piece
2SA1552T-TL-E
ON Semiconductor
2SA1552T-TL-E
$0 $/piece
ZTX968STZ
Diodes Incorporated
ZTX968STZ
$0 $/piece
2SC3837KT146P
ROHM Semiconductor
2SC3837KT146P
$0 $/piece
NJVNJD1718T4G
ON Semiconductor
NJVNJD1718T4G
$0 $/piece
PBSS5130QAZ
Nexperia USA Inc.
PBSS5130QAZ
$0 $/piece
MJB44H11G
ON Semiconductor
MJB44H11G
$0 $/piece
BD436TG
ON Semiconductor
BD436TG
$0 $/piece
BC849CW,135
Nexperia USA Inc.
BC849CW,135
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News