PMBTA13,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBTA13,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.75
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Polarity
NPN
Power Dissipation
250mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
125MHz
Frequency - Transition
125MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.182640
$0.18264
10
$0.172302
$1.72302
100
$0.162549
$16.2549
500
$0.153348
$76.674
1000
$0.144668
$144.668
PMBTA13,215 Product Details
PMBTA13,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 125MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
PMBTA13,215 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA a transition frequency of 125MHz
PMBTA13,215 Applications
There are a lot of Nexperia USA Inc. PMBTA13,215 applications of single BJT transistors.