FCX1151ATA Overview
In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.The breakdown input voltage is 40V volts.When collector current reaches its maximum, it can reach 3A volts.
FCX1151ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 250mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
FCX1151ATA Applications
There are a lot of Diodes Incorporated FCX1151ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
