FZT694BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT694BTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
120V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT694
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
130MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
120V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 400mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 400mA
Collector Emitter Breakdown Voltage
120V
Transition Frequency
130MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
120V
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.694920
$0.69492
10
$0.655585
$6.55585
100
$0.618476
$61.8476
500
$0.583468
$291.734
1000
$0.550442
$550.442
FZT694BTA Product Details
FZT694BTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 400mA 2V.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.When VCE saturation is 500mV @ 5mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 1A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor can be broken down at a voltage of 120V volts.The maximum collector current is 1A volts.
FZT694BTA Features
the DC current gain for this device is 150 @ 400mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 400mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 130MHz
FZT694BTA Applications
There are a lot of Diodes Incorporated FZT694BTA applications of single BJT transistors.