2SD2675TL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.A collector emitter saturation voltage of 120mV allows maximum design flexibility.When VCE saturation is 350mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 1A is essential for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.
2SD2675TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz
2SD2675TL Applications
There are a lot of ROHM Semiconductor 2SD2675TL applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
