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2SD2675TL

2SD2675TL

2SD2675TL

ROHM Semiconductor

2SD2675TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2675TL Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2675
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 320MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 30V
Max Frequency 100MHz
Transition Frequency 320MHz
Collector Emitter Saturation Voltage 120mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 270
Continuous Collector Current 1A
Height 950μm
Length 3mm
Width 1.8mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.300701 $0.300701
10 $0.283680 $2.8368
100 $0.267623 $26.7623
500 $0.252474 $126.237
1000 $0.238183 $238.183
2SD2675TL Product Details

2SD2675TL Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.A collector emitter saturation voltage of 120mV allows maximum design flexibility.When VCE saturation is 350mV @ 25mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Maintaining the continuous collector voltage at 1A is essential for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1A volts is possible.

2SD2675TL Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz

2SD2675TL Applications


There are a lot of ROHM Semiconductor 2SD2675TL applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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