ZXTN25020DZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25020DZTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
4.46W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
215MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25020D
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
4.46W
Case Connection
COLLECTOR
Power - Max
2.4W
Transistor Application
SWITCHING
Gain Bandwidth Product
215MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
270mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
215MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Height
1.6mm
Length
4.6mm
Width
2.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.289979
$0.289979
10
$0.273565
$2.73565
100
$0.258080
$25.808
500
$0.243472
$121.736
1000
$0.229690
$229.69
ZXTN25020DZTA Product Details
ZXTN25020DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 270mV @ 300mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.215MHz is present in the transition frequency.A breakdown input voltage of 20V volts can be used.Maximum collector currents can be below 6A volts.
ZXTN25020DZTA Features
the DC current gain for this device is 300 @ 10mA 2V the vce saturation(Max) is 270mV @ 300mA, 6A the emitter base voltage is kept at 7V a transition frequency of 215MHz
ZXTN25020DZTA Applications
There are a lot of Diodes Incorporated ZXTN25020DZTA applications of single BJT transistors.