2SAR340PT100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SAR340PT100P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
500mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
500mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 10mA 10V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.778071
$0.778071
10
$0.734029
$7.34029
100
$0.692480
$69.248
500
$0.653283
$326.6415
1000
$0.616305
$616.305
2SAR340PT100P Product Details
2SAR340PT100P Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 2mA, 20mA.A breakdown input voltage of 400V volts can be used.The maximum collector current is 100mA volts.
2SAR340PT100P Features
the DC current gain for this device is 82 @ 10mA 10V the vce saturation(Max) is 400mV @ 2mA, 20mA
2SAR340PT100P Applications
There are a lot of ROHM Semiconductor 2SAR340PT100P applications of single BJT transistors.