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2SAR340PT100P

2SAR340PT100P

2SAR340PT100P

ROHM Semiconductor

2SAR340PT100P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR340PT100P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 500mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 400V
Max Breakdown Voltage 400V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.778071 $0.778071
10 $0.734029 $7.34029
100 $0.692480 $69.248
500 $0.653283 $326.6415
1000 $0.616305 $616.305
2SAR340PT100P Product Details

2SAR340PT100P Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 82 @ 10mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 2mA, 20mA.A breakdown input voltage of 400V volts can be used.The maximum collector current is 100mA volts.

2SAR340PT100P Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 400mV @ 2mA, 20mA

2SAR340PT100P Applications


There are a lot of ROHM Semiconductor 2SAR340PT100P applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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