MMBTA55-7-F Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at -500mA is essential for high efficiency.An emitter's base voltage can be kept at -4V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -100mA current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can take a breakdown input voltage of 60V volts.A maximum collector current of 500mA volts is possible.

MMBTA55-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz

MMBTA55-7-F Applications

There are a lot of Diodes Incorporated MMBTA55-7-F applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface