ZXTN25060BZTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 305mV.When VCE saturation is 305mV @ 500mA, 5A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.185MHz is present in the transition frequency.There is a breakdown input voltage of 60V volts that it can take.A maximum collector current of 5A volts can be achieved.

ZXTN25060BZTA Features

the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of 305mV
the vce saturation(Max) is 305mV @ 500mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 185MHz

ZXTN25060BZTA Applications

There are a lot of Diodes Incorporated ZXTN25060BZTA applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface