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BCX53TX

BCX53TX

BCX53TX

Nexperia USA Inc.

BCX53TX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCX53TX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500MW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 140MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.187320 $0.18732
10 $0.176717 $1.76717
100 $0.166714 $16.6714
500 $0.157277 $78.6385
1000 $0.148375 $148.375
BCX53TX Product Details

BCX53TX Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCX53TX Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX53TX Applications


There are a lot of Nexperia USA Inc. BCX53TX applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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