ZXTP722MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
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ZXTP722MATA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.45W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP722
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.45W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
70V
Max Collector Current
2.7A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 1.5A 5V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
260mV @ 200mA, 1.5A
Collector Emitter Breakdown Voltage
70V
Current - Collector (Ic) (Max)
2.5A
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
-270mV
Max Breakdown Voltage
70V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
-7.5V
Continuous Collector Current
-2.5A
Height
580μm
Length
2.08mm
Width
2.075mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZXTP722MATA Product Details
ZXTP722MATA Overview
This device has a DC current gain of 40 @ 1.5A 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of -270mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at -2.5A to achieve high efficiency.Keeping the emitter base voltage at -7.5V can result in a high level of efficiency.180MHz is present in the transition frequency.The breakdown input voltage is 70V volts.During maximum operation, collector current can be as low as 2.7A volts.
ZXTP722MATA Features
the DC current gain for this device is 40 @ 1.5A 5V a collector emitter saturation voltage of -270mV the vce saturation(Max) is 260mV @ 200mA, 1.5A the emitter base voltage is kept at -7.5V a transition frequency of 180MHz
ZXTP722MATA Applications
There are a lot of Diodes Incorporated ZXTP722MATA applications of single BJT transistors.