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BCW61CE6327HTSA1

BCW61CE6327HTSA1

BCW61CE6327HTSA1

Infineon Technologies

BCW61CE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCW61CE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCW61
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.132355 $0.132355
500 $0.097320 $48.66
1000 $0.081100 $81.1
2000 $0.074404 $148.808
5000 $0.069536 $347.68
10000 $0.064685 $646.85
15000 $0.062558 $938.37
50000 $0.061512 $3075.6
BCW61CE6327HTSA1 Product Details

BCW61CE6327HTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 2mA 5V DC current gain.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 550mV @ 1.25mA, 50mA.There is a transition frequency of 250MHz in the part.Collector Emitter Breakdown occurs at 32VV - Maximum voltage.

BCW61CE6327HTSA1 Features


the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
a transition frequency of 250MHz

BCW61CE6327HTSA1 Applications


There are a lot of Infineon Technologies BCW61CE6327HTSA1 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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