BCX55H6327XTSA1 Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In extreme cases, the collector current can be as low as 1A volts.

BCX55H6327XTSA1 Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V

BCX55H6327XTSA1 Applications

There are a lot of Infineon Technologies BCX55H6327XTSA1 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface