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IGB50N60TATMA1

IGB50N60TATMA1

IGB50N60TATMA1

Infineon Technologies

IGB50N60TATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IGB50N60TATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *GB50N60
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 333W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Turn On Time 60 ns
Test Condition 400V, 50A, 7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Turn Off Time-Nom (toff) 396 ns
IGBT Type Trench
Gate Charge 310nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 26ns/299ns
Switching Energy 2.6mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $30.151200 $30.1512
10 $28.444528 $284.44528
100 $26.834461 $2683.4461
500 $25.315529 $12657.7645
1000 $23.882574 $23882.574
IGB50N60TATMA1 Product Details

IGB50N60TATMA1 Description


The IGB50N60TATMA1 is a Low Loss IGBT: IGBT in TRENCHSTOP? and Fieldstop technology. Due to the integration of the trench-cell and fieldstop concepts, a single TRENCHSTOP? IGBT3 rated at 600 V, 50 A and housed in a TO263 D2Pak packaging significantly improves both static and dynamic performance. Turn-on losses are further reduced by combining an IGBT with a soft recovery emitter-controlled diode. Due to the ideal balance between switching and conduction losses, the greatest efficiency is attained.



IGB50N60TATMA1 Features


  • Positive temperature coefficient in VCE(sat)

  • Low EMI

  • Low Gate Charge

  • Pb-free lead plating; RoHS compliant

  • Qualified according to JEDEC1 for target applications

  • Very low VCE(sat) 1.5V (typ.)

  • Maximum Junction Temperature 175°C

  • Short circuit withstand time 5?s

  • Designed for frequency inverters for washing machines, fans,

  • pumps and vacuum cleaners

  • TRENCHSTOP? technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed



IGB50N60TATMA1 Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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