IKD03N60RF

new-10%

Manufacturer part number:IKD03N60RF

Manufacturer:Infineon Technologies

Description:IKD03N60RF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKD03N60RF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*KD03N60
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	53.6W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	31ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	5A
Power Dissipation-Max (Abs)	53.6W
Turn On Time	18 ns
Test Condition	400V, 2.5A, 68 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 2.5A
Turn Off Time-Nom (toff)	265 ns
IGBT Type	Trench
Gate Charge	17.1nC
Current - Collector Pulsed (Icm)	7.5A
Td (on/off) @ 25°C	10ns/128ns
Switching Energy	90μJ
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
RoHS Status	RoHS Compliant