STGB30NC60KT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGB30NC60KT4 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerMESH™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
185W
Terminal Form
GULL WING
Base Part Number
STGB30
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Turn On Delay Time
29 ns
Power - Max
185W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
120 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Collector Emitter Breakdown Voltage
600V
Max Breakdown Voltage
600V
Turn On Time
41 ns
Test Condition
480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 20A
Turn Off Time-Nom (toff)
290 ns
Gate Charge
96nC
Current - Collector Pulsed (Icm)
125A
Td (on/off) @ 25°C
29ns/120ns
Switching Energy
350μJ (on), 435μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$2.93265
$2.93265
STGB30NC60KT4 Product Details
STGB30NC60KT4 Description
STGB30NC60KT4 is a 600v short circuit rugged IGBT. This IGBT STGB30NC60KT4 utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGB30NC60KT4 is in the D2PAK package with 185w Power Dissipation.
STGB30NC60KT4 Features
Low on-voltage drop (VCE(sat)
Low Cres/ Cies ratio (no cross-conduction susceptibility)