IRF8788PBF

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IRF8788PBF

Manufacturer part number:IRF8788PBF

Manufacturer:Infineon Technologies

Description:IRF8788PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRF8788PBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	HEXFET®
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	2.8MOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	5720pF @ 15V
Current - Continuous Drain (Id) @ 25°C	24A Ta
Gate Charge (Qg) (Max) @ Vgs	66nC @ 4.5V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Avalanche Energy Rating (Eas)	230 mJ
Recovery Time	36 ns
Nominal Vgs	1.8 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free