IRG4BC20UD datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4BC20UD Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
ULTRA FAST SOFT RECOVERY
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
60W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
37ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
13A
Turn On Time
55 ns
Test Condition
480V, 6.5A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 6.5A
Turn Off Time-Nom (toff)
320 ns
Gate Charge
27nC
Current - Collector Pulsed (Icm)
52A
Td (on/off) @ 25°C
39ns/93ns
Switching Energy
160μJ (on), 130μJ (off)
RoHS Status
Non-RoHS Compliant
IRG4BC20UD Product Details
IRG4BC20UD Description
IRG4BC20UD is an insulated gate bipolar transistor with ultrafast soft recovery diode in TO-220-3 package, manufactured by Infineon Technologies. We can use it in power control.
IRG4BC20UD Features
Lead-free
Industry standard TO-220AB package
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Ultrafast: optimized for high operating frequencies 8-40kHz in hard switching. >200 kHz in resonant mode.