NGTB15N60R2FG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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NGTB15N60R2FG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Operating Temperature
175°C TJ
Packaging
Tube
Published
2007
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
54W
Element Configuration
Single
Input Type
Standard
Power - Max
54W
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
24A
Reverse Recovery Time
95 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.85V
Test Condition
300V, 15A, 30 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 15A
Gate Charge
80nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
70ns/190ns
Switching Energy
550μJ (on), 220μJ (off)
Height
15.87mm
Length
10.16mm
Width
4.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.636254
$0.636254
10
$0.600240
$6.0024
100
$0.566264
$56.6264
500
$0.534211
$267.1055
1000
$0.503973
$503.973
NGTB15N60R2FG Product Details
NGTB15N60R2FG Description
The NGTB15N60R2FG is an IGBT with 600V, 14A, N-Channel. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.
NGTB15N60R2FG Features
Diode VF=1.7V typ. (IF=15A)
Diode trr=95ns typ.
10μs Short Circuit Capability
Reverse Conducting II IGBT
IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)
IGBT tf=75ns typ.
NGTB15N60R2FG Applications
General Purpose Inverter
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters.
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.
It is used in UPS (Uninterruptible Power Supply) system.