NGTB15N60R2FG Description

The NGTB15N60R2FG is an IGBT with 600V, 14A, N-Channel. The BJT and MOSFET are combined to form the IGBT, or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

NGTB15N60R2FG Features

• Diode VF=1.7V typ. (IF=15A)

• Diode trr=95ns typ.

• 10μs Short Circuit Capability

• Reverse Conducting II IGBT

• IGBT VCE(sat)=1.85V typ. (IC=15A, VGE=15V)

• IGBT tf=75ns typ.

NGTB15N60R2FG Applications

• General Purpose Inverter

• It is used in AC and DC motor drives offering speed control.

• It is used in chopper and inverters.

• It is used in solar inverters.

• It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

• It is used in UPS (Uninterruptible Power Supply) system.