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IXGP20N120BD1

IXGP20N120BD1

IXGP20N120BD1

IXYS

IGBT 1200V 40A 190W TO220

SOT-23

IXGP20N120BD1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 190W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N120
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 190W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Reverse Recovery Time 40ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 35 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A
Turn Off Time-Nom (toff) 790 ns
Gate Charge 72nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 2.1mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $4.74860 $237.43

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