IXGH32N60BU1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available on our website
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IXGH32N60BU1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.500007g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2003
Series
HiPerFAST™
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
200W
Current Rating
60A
Base Part Number
IXG*32N60
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
MOTOR CONTROL
Rise Time
20ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
100 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
50ns
JEDEC-95 Code
TO-247AD
Collector Emitter Breakdown Voltage
600V
Turn On Time
50 ns
Test Condition
480V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 32A
Turn Off Time-Nom (toff)
240 ns
Gate Charge
110nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
25ns/100ns
Switching Energy
600μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IXGH32N60BU1 Product Details
IXGH32N60BU1 Description
The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device. The IGBT is used in medium to high-power applications like switched-mode power supplies, traction motor control and induction heating.