IRGP4063D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGP4063D-EPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
330W
Base Part Number
IRGP4063D
Rise Time-Max
56ns
Element Configuration
Single
Power Dissipation
330W
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.14V
Max Collector Current
96A
Reverse Recovery Time
115 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.05V
Test Condition
400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.14V @ 15V, 48A
IGBT Type
Trench
Gate Charge
140nC
Current - Collector Pulsed (Icm)
200A
Td (on/off) @ 25°C
60ns/145ns
Switching Energy
625μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
46ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
IRGP4063D-EPBF Product Details
IRGP4063D-EPBF Description
IRGP4063D-EPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA, it is able to provide rugged transient performance for increased reliability. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides increased reliability based on the maximum junction temperature rated at 175°C.