15C01C-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
15C01C-TB-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
7 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
300mW
Pin Count
3
Power - Max
300mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage
15V
Frequency - Transition
330MHz
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
300
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.383000
$0.383
10
$0.361321
$3.61321
100
$0.340869
$34.0869
500
$0.321574
$160.787
1000
$0.303372
$303.372
15C01C-TB-E Product Details
15C01C-TB-E Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 300mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 700mA volts at its maximum.
15C01C-TB-E Features
the DC current gain for this device is 300 @ 10mA 2V the vce saturation(Max) is 300mV @ 10mA, 200mA the emitter base voltage is kept at 5V
15C01C-TB-E Applications
There are a lot of ON Semiconductor 15C01C-TB-E applications of single BJT transistors.