BC848CLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can be broken down at a voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CLT1G Applications
There are a lot of ON Semiconductor BC848CLT1G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
