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MSC2712YT1G

MSC2712YT1G

MSC2712YT1G

ON Semiconductor

MSC2712YT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MSC2712YT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MSC2712
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 120
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.052224 $0.052224
500 $0.038400 $19.2
1000 $0.032000 $32
2000 $0.029358 $58.716
5000 $0.027437 $137.185
10000 $0.025523 $255.23
15000 $0.024684 $370.26
50000 $0.024271 $1213.55
MSC2712YT1G Product Details

MSC2712YT1G Overview


DC current gain in this device equals 120 @ 2mA 6V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.An emitter's base voltage can be kept at 7V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 50MHz.Collector current can be as low as 100mA volts at its maximum.

MSC2712YT1G Features


the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz

MSC2712YT1G Applications


There are a lot of ON Semiconductor MSC2712YT1G applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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