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BSP61,115

  • BSP61,115
  • BSP61,115

BSP61,115

BSP61,115

Nexperia USA Inc.

BSP61,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSP61,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSP61
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation 1.25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500μA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 200MHz
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.429820 $0.42982
10 $0.405491 $4.05491
100 $0.382539 $38.2539
500 $0.360885 $180.4425
1000 $0.340458 $340.458
BSP61,115 Product Details

BSP61,115 Overview


In this device, the DC current gain is 2000 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.There is a transition frequency of 200MHz in the part.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.

BSP61,115 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz

BSP61,115 Applications


There are a lot of Nexperia USA Inc. BSP61,115 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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