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BC850BE6327HTSA1

  • BC850BE6327HTSA1
  • BC850BE6327HTSA1

BC850BE6327HTSA1

BC850BE6327HTSA1

Infineon Technologies

BC850BE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC850BE6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW NOISE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC850
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 330mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 250MHz
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.694851 $0.694851
10 $0.655520 $6.5552
100 $0.618415 $61.8415
500 $0.583410 $291.705
1000 $0.550387 $550.387
BC850BE6327HTSA1 Product Details

BC850BE6327HTSA1 Overview


This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.There is a transition frequency of 250MHz in the part.The device exhibits a collector-emitter breakdown at 45V.

BC850BE6327HTSA1 Features


the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz

BC850BE6327HTSA1 Applications


There are a lot of Infineon Technologies BC850BE6327HTSA1 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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