MJE5852G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 5 @ 5A 5V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 3A, 8A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Maximum collector currents can be below 8A volts.

MJE5852G Features

the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A

MJE5852G Applications

There are a lot of ON Semiconductor MJE5852G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface