2SA1418S-TD-E Overview

This device has a DC current gain of 100 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 120mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 6V to gain high efficiency.An input voltage of 160V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 700mA volts.

2SA1418S-TD-E Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at 6V

2SA1418S-TD-E Applications

There are a lot of ON Semiconductor 2SA1418S-TD-E applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter