NSS40501UW3T2G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2A 2V.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 150mV @ 400mA, 4A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.The breakdown input voltage is 40V volts.Collector current can be as low as 5A volts at its maximum.

NSS40501UW3T2G Features

the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

NSS40501UW3T2G Applications

There are a lot of ON Semiconductor NSS40501UW3T2G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface