BC849CLT1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.As a result, the part has a transition frequency of 100MHz.A breakdown input voltage of 30V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

BC849CLT1G Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz

BC849CLT1G Applications

There are a lot of ON Semiconductor BC849CLT1G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver