BD242CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD242CG Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BD242
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
40mW
Case Connection
COLLECTOR
Power - Max
40W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
115V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.922200
$0.9222
10
$0.870000
$8.7
100
$0.820755
$82.0755
500
$0.774297
$387.1485
1000
$0.730469
$730.469
BD242CG Product Details
BD242CG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.2V @ 600mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -3A.A transition frequency of 3MHz is present in the part.During maximum operation, collector current can be as low as 3A volts.
BD242CG Features
the DC current gain for this device is 25 @ 1A 4V a collector emitter saturation voltage of 1.2V the vce saturation(Max) is 1.2V @ 600mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -3A a transition frequency of 3MHz
BD242CG Applications
There are a lot of ON Semiconductor BD242CG applications of single BJT transistors.