FGD3N60LSDTM

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Manufacturer part number:FGD3N60LSDTM

Manufacturer:ON Semiconductor

Description:FGD3N60LSDTM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGD3N60LSDTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	40W
Terminal Form	GULL WING
Current Rating	6A
Base Part Number	FGD3N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	6A
Reverse Recovery Time	234 ns
Collector Emitter Breakdown Voltage	600V
Max Breakdown Voltage	600V
Turn On Time	85 ns
Test Condition	480V, 3A, 470 Ω, 10V
Vce(on) (Max) @ Vge, Ic	1.5V @ 10V, 3A
Turn Off Time-Nom (toff)	1420 ns
Gate Charge	12.5nC
Current - Collector Pulsed (Icm)	25A
Td (on/off) @ 25°C	40ns/600ns
Switching Energy	250μJ (on), 1mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	2.3mm
Length	6.6mm
Width	6.1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free