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BSV52,215

  • BSV52,215
  • BSV52,215

BSV52,215

BSV52,215

Nexperia USA Inc.

BSV52,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BSV52,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BSV52
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 500MHz
Frequency - Transition 500MHz
VCEsat-Max 0.4 V
Turn Off Time-Max (toff) 20ns
Turn On Time-Max (ton) 10ns
Collector-Base Capacitance-Max 4pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.10782 $0.32346
6,000 $0.10183 $0.61098
15,000 $0.09285 $1.39275
30,000 $0.08686 $2.6058
75,000 $0.08386 $6.2895
BSV52,215 Product Details

BSV52,215 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 10mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In this part, there is a transition frequency of 500MHz.Device displays Collector Emitter Breakdown (12V maximal voltage).

BSV52,215 Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 500MHz

BSV52,215 Applications


There are a lot of Nexperia USA Inc. BSV52,215 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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