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JANTXV2N2222A

JANTXV2N2222A

JANTXV2N2222A

Microsemi Corporation

JANTXV2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N2222A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Supplier Device Package TO-18 (TO-206AA)
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/255
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 500mW
Number of Elements 1
Polarity NPN
Power Dissipation 500mW
Power - Max 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 800mA
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
390 $4.58746 $1789.1094
JANTXV2N2222A Product Details

JANTXV2N2222A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is no device package available from the supplier for this product.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 800mA volts can be achieved.

JANTXV2N2222A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)

JANTXV2N2222A Applications


There are a lot of Microsemi Corporation JANTXV2N2222A applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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