JANTXV2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTXV2N2222A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-18 (TO-206AA)
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/255
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Number of Elements
1
Polarity
NPN
Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
50nA
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
800mA
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
390
$4.58746
$1789.1094
JANTXV2N2222A Product Details
JANTXV2N2222A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is no device package available from the supplier for this product.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.A maximum collector current of 800mA volts can be achieved.
JANTXV2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the supplier device package of TO-18 (TO-206AA)
JANTXV2N2222A Applications
There are a lot of Microsemi Corporation JANTXV2N2222A applications of single BJT transistors.