KSC2330YTA Overview
This device has a DC current gain of 120 @ 20mA 10V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 1mA, 10mA.Emitter base voltages of 7V can achieve high levels of efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.50MHz is present in the transition frequency.The breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 100mA volts.
KSC2330YTA Features
the DC current gain for this device is 120 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 7V
the current rating of this device is 100mA
a transition frequency of 50MHz
KSC2330YTA Applications
There are a lot of ON Semiconductor KSC2330YTA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
