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BC848BWT106

BC848BWT106

BC848BWT106

ROHM Semiconductor

BC848BWT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BC848BWT106 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Number of Elements 1
Element Configuration Single
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Continuous Collector Current 100mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.043560 $0.04356
500 $0.032029 $16.0145
1000 $0.026691 $26.691
2000 $0.024487 $48.974
5000 $0.022885 $114.425
10000 $0.021289 $212.89
15000 $0.020589 $308.835
50000 $0.020245 $1012.25
BC848BWT106 Product Details

BC848BWT106 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 30V volts.Maximum collector currents can be below 100mA volts.

BC848BWT106 Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz

BC848BWT106 Applications


There are a lot of ROHM Semiconductor BC848BWT106 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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