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FMMT619TC

FMMT619TC

FMMT619TC

Diodes Incorporated

FMMT619TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT619TC Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 625mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 165MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT619
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 165MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 220mV @ 50mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 165MHz
Collector Emitter Saturation Voltage 150mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 2A
Height 1.1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.090480 $0.09048
500 $0.066529 $33.2645
1000 $0.055441 $55.441
2000 $0.050863 $101.726
5000 $0.047536 $237.68
10000 $0.044219 $442.19
15000 $0.042765 $641.475
50000 $0.042051 $2102.55
FMMT619TC Product Details

FMMT619TC Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 50mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.There is a transition frequency of 165MHz in the part.Collector current can be as low as 2A volts at its maximum.

FMMT619TC Features


the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 220mV @ 50mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 165MHz

FMMT619TC Applications


There are a lot of Diodes Incorporated FMMT619TC applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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