FMMT619TC datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FMMT619TC Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
625mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
165MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FMMT619
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
165MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
220mV @ 50mA, 2A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
165MHz
Collector Emitter Saturation Voltage
150mV
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
2A
Height
1.1mm
Length
3mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.090480
$0.09048
500
$0.066529
$33.2645
1000
$0.055441
$55.441
2000
$0.050863
$101.726
5000
$0.047536
$237.68
10000
$0.044219
$442.19
15000
$0.042765
$641.475
50000
$0.042051
$2102.55
FMMT619TC Product Details
FMMT619TC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 220mV @ 50mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.There is a transition frequency of 165MHz in the part.Collector current can be as low as 2A volts at its maximum.
FMMT619TC Features
the DC current gain for this device is 200 @ 1A 2V a collector emitter saturation voltage of 150mV the vce saturation(Max) is 220mV @ 50mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 165MHz
FMMT619TC Applications
There are a lot of Diodes Incorporated FMMT619TC applications of single BJT transistors.