PBSS5620PA,115 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 190 @ 2A 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 300mA, 6A.Emitter base voltages of -7V can achieve high levels of efficiency.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 20V volts.During maximum operation, collector current can be as low as 6A volts.

PBSS5620PA,115 Features

the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz

PBSS5620PA,115 Applications

There are a lot of Nexperia USA Inc. PBSS5620PA,115 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface