2SAR512PT100 Overview
DC current gain in this device equals 200 @ 100mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 35mA, 700mA.With the emitter base voltage set at -6V, an efficient operation can be achieved.The part has a transition frequency of 430MHz.As a result, it can handle voltages as low as 30V volts.A maximum collector current of 2A volts is possible.
2SAR512PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 430MHz
2SAR512PT100 Applications
There are a lot of ROHM Semiconductor 2SAR512PT100 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
