2SC4116-Y,LF Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages should be kept at 150mA to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.A breakdown input voltage of 50V volts can be used.In extreme cases, the collector current can be as low as 150mA volts.

2SC4116-Y,LF Features

the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SC4116-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SC4116-Y,LF applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface