2PC4617QMB,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
2PC4617QMB,315 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
250mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2PC4617
Pin Count
3
Power - Max
250mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
200mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.308093
$0.308093
10
$0.290654
$2.90654
100
$0.274202
$27.4202
500
$0.258681
$129.3405
1000
$0.244039
$244.039
2PC4617QMB,315 Product Details
2PC4617QMB,315 Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Collector current can be as low as 100mA volts at its maximum.
2PC4617QMB,315 Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 200mV @ 5mA, 50mA the emitter base voltage is kept at 5V
2PC4617QMB,315 Applications
There are a lot of Nexperia USA Inc. 2PC4617QMB,315 applications of single BJT transistors.