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PBHV8560ZX

  • PBHV8560ZX
  • PBHV8560ZX

PBHV8560ZX

PBHV8560ZX

Nexperia USA Inc.

PBHV8560ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBHV8560ZX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Max Power Dissipation 650mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 650mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 100mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.29600 $0.296
2,000 $0.27200 $0.544
5,000 $0.26400 $1.32
PBHV8560ZX Product Details

PBHV8560ZX Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 50mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 5mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device can take an input voltage of 600V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

PBHV8560ZX Features


the DC current gain for this device is 70 @ 50mA 10V
the vce saturation(Max) is 100mV @ 5mA, 50mA
the emitter base voltage is kept at 6V

PBHV8560ZX Applications


There are a lot of Nexperia USA Inc. PBHV8560ZX applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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