BC856B-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 220 @ 2mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.An input voltage of 45V volts is the breakdown voltage.There is a 65V maximal voltage in the device due to collector-emitter breakdown.When collector current reaches its maximum, it can reach -100mA volts.
BC856B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC856B-7-F Applications
There are a lot of Diodes Incorporated BC856B-7-F applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
