MMBT4124LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT4124LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
200mA
Frequency
300MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT4124
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300W
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
300mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
5V
hFE Min
120
Height
6.35mm
Length
8.89mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.092000
$0.092
500
$0.067647
$33.8235
1000
$0.056373
$56.373
2000
$0.051718
$103.436
5000
$0.048335
$241.675
10000
$0.044962
$449.62
15000
$0.043484
$652.26
50000
$0.042757
$2137.85
MMBT4124LT1G Product Details
MMBT4124LT1G Overview
This device has a DC current gain of 120 @ 2mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 300MHz.Breakdown input voltage is 25V volts.A maximum collector current of 200mA volts can be achieved.
MMBT4124LT1G Features
the DC current gain for this device is 120 @ 2mA 1V a collector emitter saturation voltage of 300mV the vce saturation(Max) is 300mV @ 5mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 200mA a transition frequency of 300MHz
MMBT4124LT1G Applications
There are a lot of ON Semiconductor MMBT4124LT1G applications of single BJT transistors.