MMBT4124LT1G Overview
This device has a DC current gain of 120 @ 2mA 1V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 200mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 300MHz.Breakdown input voltage is 25V volts.A maximum collector current of 200mA volts can be achieved.
MMBT4124LT1G Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 300MHz
MMBT4124LT1G Applications
There are a lot of ON Semiconductor MMBT4124LT1G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
