NSS12200LT1G Overview

DC current gain in this device equals 250 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -130mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 180mV @ 200mA, 2A.An emitter's base voltage can be kept at 7V to gain high efficiency.There is a transition frequency of 100MHz in the part.An input voltage of 12V volts is the breakdown voltage.A maximum collector current of 2A volts is possible.

NSS12200LT1G Features

the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -130mV
the vce saturation(Max) is 180mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS12200LT1G Applications

There are a lot of ON Semiconductor NSS12200LT1G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting